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CEL (California Eastern Laboratories) NESG2107M33-A RF BJT

RF TRANS NPN 5V 10GHZ 3SMINMOLD

In Stock ActiveCEL (California Eastern Laboratories)3-SMD, Flat Lead
NESG2107M33-A 3-SMD, Flat Lead package illustration

Same model may have multiple batches, images only for reference.

NESG2107M33-A
Part Number (MPN)
NESG2107M33-A
Detailed Description
RF TRANS NPN 5V 10GHZ 3SMINMOLD
Package
3-SMD, Flat Lead
Lifecycle Status
Active
Datasheet
PDF NESG2107M33-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG2107M33-A RF BJT technical specifications.

General

Package / Case
3-SMD, Flat Lead
Packaging
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
5V
Transistor Type
NPN
Power Max
130mW
Noise Figure Db Typ F
0.9dB ~ 1.5dB @ 2GHz
Gain
7dB ~ 10dB
Frequency Transition
10GHz

Alternate Parts Comparison (NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A vs NESG2046M33-T3-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max100mA600mA35 mA40 mA
Dc Current Gain Hfe Min IC Vce140 @ 5mA, 1V80 @ 100mA, 3V200 @ 5mA, 2V140 @ 2mA, 1V
Power Max130mW1.9W80 mW130 mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max5V9.2V2.3 V5 V
Package / Case3-SMD, Flat Lead--BulkTape & Reel
Operating Temperature150°C (TJ)--150°C (TJ)150°C (TJ)
Frequency Transition10GHz--60 GHz18 GHz
Gain7dB ~ 10dB--16dB9.5dB ~ 11.5dB
Noise Figure Db Typ F0.9dB ~ 1.5dB @ 2GHz--0.9dB ~ 1.1dB @ 2GHz0.8dB ~ 1.5dB @ 2GHz
Lifecycle Status--ObsoleteObsoleteObsolete
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