CEL (California Eastern Laboratories) NESG2107M33-A RF BJT
RF TRANS NPN 5V 10GHZ 3SMINMOLD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NESG2107M33-A
Detailed Description
RF TRANS NPN 5V 10GHZ 3SMINMOLD
Package
3-SMD, Flat Lead
Lifecycle Status
Active
Datasheet
NESG2107M33-A Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) NESG2107M33-A RF BJT technical specifications.
General
Package / Case
3-SMD, Flat Lead
Packaging
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
5V
Transistor Type
NPN
Power Max
130mW
Noise Figure Db Typ F
0.9dB ~ 1.5dB @ 2GHz
Gain
7dB ~ 10dB
Frequency Transition
10GHz
Alternate Parts Comparison (NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A vs NESG2046M33-T3-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 3-SMD, Flat Lead | -- | -- | -- |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | 150°C (TJ) | -- | -- | -- |
| Base Product Number | NESG2107 | -- | -- | -- |
| Current Collector IC Max | 100mA | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 140 @ 5mA, 1V | -- | -- | -- |
| Frequency Transition | 10GHz | -- | -- | -- |
| Gain | 7dB ~ 10dB | -- | -- | -- |
| Noise Figure Db Typ F | 0.9dB ~ 1.5dB @ 2GHz | -- | -- | -- |
| Power Max | 130mW | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 5V | -- | -- | -- |
| Action |
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