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CEL (California Eastern Laboratories) NE68019-T1 RF BJT

NE68019-T1 by CEL (California Eastern Laboratories) · RF BJT · SOT-523

In Stock ActiveCEL (California Eastern Laboratories)SOT-523
NE68019-T1 SOT-523 package illustration

Same model may have multiple batches, images only for reference.

NE68019-T1
Part Number (MPN)
NE68019-T1
Package
SOT-523
Lifecycle Status
Active
Datasheet
PDF NE68019-T1 Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE68019-T1 RF BJT technical specifications.

General

RoHS
Yes
Operating Temperature
- 65°C ~ + 150°C
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Operating Frequency
10 GHz
Emitter Base Voltage Vebo
1.5 V
Continuous Collector Current
35 mA
Configuration
Single
Collector Base Voltage Vcbo
20 V

Alternate Parts Comparison (NE68019-T1 vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature- 65°C ~ + 150°C150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
PackageSOT-523Tape & Reel (TR)Tape & Reel (TR)SOT-523
Transistor TypeBipolarNPNNPNNPN
Mounting Type--Surface MountSurface MountSurface Mount
Lifecycle Status--ObsoleteObsoleteObsolete
Current Collector IC Max--500mA250mA35mA
Dc Current Gain Hfe Min IC Vce--40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain--12dB8.3dB9.6dB
Power Max--735mW2W100mW
Voltage Collector Emitter Breakdown Max--5V15V10V
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