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CEL (California Eastern Laboratories) NE85619-T1-A RF BJT

NE85619-T1-A by CEL (California Eastern Laboratories) · RF BJT · SOT-523

In Stock ActiveCEL (California Eastern Laboratories)SOT-523
NE85619-T1-A SOT-523 package illustration

Same model may have multiple batches, images only for reference.

NE85619-T1-A
Part Number (MPN)
NE85619-T1-A
Package
SOT-523
Lifecycle Status
Active
Datasheet
PDF NE85619-T1-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE85619-T1-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Collector Emitter Voltage Vceo Max
12 V
Emitter Base Voltage Vebo
3 V
Continuous Collector Current
100 mA
Minimum Operating Temperature C
- 65
Maximum Operating Temperature C
+ 150

Related Parts Comparison (NE85619-T1-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
PackageSOT-523Tape & Reel (TR)Tape & Reel (TR)SOT-523
Transistor TypeBipolarNPNNPNNPN
Operating Temperature--150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle Status--ObsoleteObsoleteObsolete
Current Collector IC Max--500mA250mA35mA
Dc Current Gain Hfe Min IC Vce--40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain--12dB8.3dB9.6dB
Power Max--735mW2W100mW
Voltage Collector Emitter Breakdown Max--5V15V10V
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