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CEL (California Eastern Laboratories) 2SC5015-T1-A RF BJT

RF TRANSISTOR NPN SOT-343

4,461 ActiveCEL (California Eastern Laboratories)SC-82A, SOT-343RoHS
2SC5015-T1-A - No Image Available

Same model may have multiple batches, images only for reference.

2SC5015-T1-A
Part Number (MPN)
2SC5015-T1-A
Detailed Description
RF TRANSISTOR NPN SOT-343
Package
SC-82A, SOT-343
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 2SC5015-T1-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) 2SC5015-T1-A RF BJT technical specifications.

General

Package / Case
SC-82A, SOT-343
Packaging
Tape & Reel (TR)
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
6V
Transistor Type
NPN
Power Max
150mW
Other Names
2SC5015-T1-ATR
Noise Figure Db Typ F
1.5dB @ 2GHz
Gain
11dB

Alternate Parts Comparison (2SC5015-T1-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NESG2107M33-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-82A, SOT-343SOT-343FTO-243AA3-SMD, Flat Lead
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Current Collector IC Max30mA500mA250mA100mA
Dc Current Gain Hfe Min IC Vce75 @ 10mA, 3V40 @ 100mA, 3V60 @ 50mA, 10V140 @ 5mA, 1V
Gain11dB12dB8.3dB7dB ~ 10dB
Power Max150mW735mW2W130mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max6V5V15V5V
Frequency Transition12GHz20GHz--10GHz
Noise Figure Db Typ F1.5dB @ 2GHz--1.5dB ~ 2dB @ 500MHz ~ 1GHz0.9dB ~ 1.5dB @ 2GHz
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