Vishay TP0610K-T1-E3 MOSFETs
P-CH JFET, 60V, 185mA, 6R, TO-236, SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TP0610K-T1-E3
Base Model
Detailed Description
P-CH JFET, 60V, 185mA, 6R, TO-236, SM
Package
SOT23-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Vishay TP0610K-T1-E3 MOSFETs technical specifications.
General
Series
TP0
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
185 mA
Rds on Drain Source Resistance
6 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (TP0610K-T1-E3 vs TP0610K-T1-GE3 vs SQ2361ES-T1_GE3 vs SI2316BDS-T1-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Configuration | Single | Single | SINGLE WITH BUILT-IN DIODE | Single |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Series | TP0 | TP0 | -- | SI2 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| ID Continuous Drain Current | 185 mA | 185 mA | -- | 4.5 A |
| Pd Power Dissipation | 350 mW | 350 mW | -- | 1.66 W |
| Qg Gate Charge | 1.7 nC | 1.7 nC | -- | 3.16 nC |
| Rds on Drain Source Resistance | 6 Ohms | 6 Ohms | -- | 50 mOhms |
| Technology | Si | Si | -- | Si |
| Action |
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