Vishay SI2309CDS-T1-BE3 MOSFETs
Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2309CDS-T1-BE3
Base Model
Detailed Description
Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R
Package
SOT-23-3
Lifecycle Status
Active
Datasheet
SI2309CDS-T1-BE3 Datasheet
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Technical Specifications
Vishay SI2309CDS-T1-BE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
1.6 A
Rds on Drain Source Resistance
345 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
3 V
Related Parts Comparison (SI2309CDS-T1-BE3 vs SI2309CDS-T1-GE3 vs SI2309CDS-T1-E3 vs SIP32461DB-T2-GE1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Maximum Operating Temperature C | + 150 | + 150 | + 150 | + 85 |
| Minimum Operating Temperature C | - 55 | - 55 | - 55 | - 40 |
| Package | SOT-23-3 | SOT23-3 | SOT23-3 | UFBGA-4 |
| Pd Power Dissipation | 1.7 W | 1.7 W | 1.7 W | 300 mW |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz | 0.002420 oz |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 10 ns | 10 ns | 10 ns | -- |
| ID Continuous Drain Current | 1.6 A | 1.6 A | 1.6 A | -- |
| Action |
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