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Vishay SI2308DS-T1-GE3 MOSFETs

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

290 ActiveVishaySOT-23-3$0.14
SI2308DS-T1-GE3 SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

SI2308DS-T1-GE3
Manufacturer
Part Number (MPN)
SI2308DS-T1-GE3
Detailed Description
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Package
SOT-23-3
Lifecycle Status
Active
Datasheet
PDF SI2308DS-T1-GE3 Datasheet
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Technical Specifications

Vishay SI2308DS-T1-GE3 MOSFETs technical specifications.

General

Series
SI2
RoHS
Yes
Number of Channels
1
Package / Case
SOT-23-3
Operating Temperature
-55 °C ~ 150 °C
Continuous Drain Current ID
2 A
Drain to Source Resistance
160mR
Drain to Source Voltage Vdss
60 V
Fall Time
10 ns
Gate to Source Voltage Vgs
20 V

Related Parts Comparison (SI2308DS-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-23-34-UFBGA4-UFBGA4-UFDFN Exposed Pad
Operating Temperature-55 °C ~ 150 °C-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
SeriesSI2SIP324x1--SIP324x1
Mounting Type--Surface MountSurface MountSurface Mount
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Lifecycle Status--ActiveActiveActive
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Input Type--Non-InvertingNon-InvertingNon-Inverting
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