Vishay 2N7002-T1-GE3 MOSFETs
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N7002-T1-GE3
Base Model
Detailed Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Package
SOT-23-3
Lifecycle Status
Active
Datasheet
2N7002-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay 2N7002-T1-GE3 MOSFETs technical specifications.
General
Series
2N700/2N7002
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
115 mA
Rds on Drain Source Resistance
7.5 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (2N7002-T1-GE3 vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Series | 2N700/2N7002 | RUM002N02 |
| Mounting Type | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement |
| Configuration | Single | Single |
| Maximum Operating Temperature C | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | - 55 |
| Package | SOT-23-3 | SOT-23 |
| Pd Power Dissipation | 200 mW | 150 mW |
| Rds on Drain Source Resistance | 7.5 Ohms | 1.2 Ohms |
| Technology | Si | Si |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
BSS83PInfineon TechnologiesDirectInfineon
MOSFET P-CH 60V 0.33A SOT23
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