Vishay SQM120P10_10M1LGE3 MOSFETs
Trans MOSFET P-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQM120P10_10M1LGE3
Base Model
Detailed Description
Trans MOSFET P-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK
Package
TO-263-3
Lifecycle Status
Active
Datasheet
SQM120P10_10M1LGE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQM120P10_10M1LGE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
True
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
120 A
Rds on Drain Source Resistance
8.1 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (SQM120P10_10M1LGE3 vs SQM120P06-07L_GE3 vs SQM120P04-04L_GE3 vs IRLZ44STRRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | SQ | Automotive, AEC-Q101, TrenchFET® | IRLZ |
| RoHS | True | Compliant with Exemption | Yes | True |
| Package | TO-263-3 | -- | -- | TO-263-3 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz | 0.050717 oz |
| Action |
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