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Vishay SQJQ466E-T1_GE3 MOSFETs

MOSFET N-CH 60V 200A PPAK 8 X 8

173 ActiveVishayPowerPAK® 8 x 8$4.14
SQJQ466E-T1_GE3 PowerPAK® 8 x 8 package illustration

Same model may have multiple batches, images only for reference.

SQJQ466E-T1_GE3
Manufacturer
Part Number (MPN)
SQJQ466E-T1_GE3
Detailed Description
MOSFET N-CH 60V 200A PPAK 8 X 8
Package
PowerPAK® 8 x 8
Lifecycle Status
Active
Datasheet
PDF SQJQ466E-T1_GE3 Datasheet
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Technical Specifications

Vishay SQJQ466E-T1_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK® 8 x 8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
200 A

Alternate Parts Comparison (SQJQ466E-T1_GE3 vs SQJQ900E-T1_GE3 vs SQJQ480E-T1_GE3 vs SQJQ404E-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Package / CasePowerPAK® 8 x 8PowerPAK® 8 x 8 DualPowerPAK® 8 x 8Tape and Reel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSROHS3 CompliantYesYesCompliant
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C200A (Tc)100A (Tc)150A (Tc)200A (Tc)
Drain to Source Voltage Vdss60 V40 V80 V40 V
Fet TypeN-Channel2 N-Channel (Dual)N-ChannelN-Channel
Gate Charge Qg Max Vgs180 nC @ 10 V120nC @ 10V144 nC @ 10 V270 nC @ 10 V
Input Capacitance Ciss Max Vds10210 pF @ 25 V5900pF @ 20V8625 pF @ 25 V16480 pF @ 25 V
Rds on Max ID Vgs1.9mOhm @ 10A, 10V3.9mOhm @ 20A, 10V3mOhm @ 20A, 10V1.72mOhm @ 20A, 10V
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