Vishay SQJQ410EL-T1_GE3 MOSFETs
N-Channel MOSFET, 30V, 10A, Low Rds(on)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJQ410EL-T1_GE3
Detailed Description
N-Channel MOSFET, 30V, 10A, Low Rds(on)
Package
PowerPAK® 8 x 8
Lifecycle Status
Active
Datasheet
SQJQ410EL-T1_GE3 Datasheet
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Technical Specifications
Vishay SQJQ410EL-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Channels
1
Package / Case
PowerPAK® 8 x 8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
135 A
Current Continuous Drain ID 25 C
135A (Tc)
Drain to Source Breakdown Voltage
100 V
Alternate Parts Comparison (SQJQ410EL-T1_GE3 vs SQJQ960EL-T1_GE3 vs SQJQ900E-T1_GE3 vs SQJQ404E-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | SQ | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Mounting Type | Surface Mount | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Compliant |
| Package / Case | PowerPAK® 8 x 8 | -- | PowerPAK® 8 x 8 Dual | Tape and Reel |
| Operating Temperature | -55°C ~ 175°C (TJ) | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | -- | Active | Active |
| Current Continuous Drain ID 25 C | 135A (Tc) | -- | 100A (Tc) | 200A (Tc) |
| Drain to Source Voltage Vdss | 100 V | -- | 40 V | 40 V |
| Fet Type | N-Channel | -- | 2 N-Channel (Dual) | N-Channel |
| Gate Charge Qg Max Vgs | 150 nC @ 10 V | -- | 120nC @ 10V | 270 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 7350 pF @ 25 V | -- | 5900pF @ 20V | 16480 pF @ 25 V |
| Rds on Max ID Vgs | 3.4mOhm @ 20A, 10V | -- | 3.9mOhm @ 20A, 10V | 1.72mOhm @ 20A, 10V |
| Action |
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