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Vishay SQJQ900E-T1_GE3 MOSFETs

Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

3,543 ActiveVishayPowerPAK® 8 x 8 Dual$4.76
SQJQ900E-T1_GE3 PowerPAK® 8 x 8 Dual package illustration

Same model may have multiple batches, images only for reference.

SQJQ900E-T1_GE3
Manufacturer
Part Number (MPN)
SQJQ900E-T1_GE3
Detailed Description
Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK® 8 x 8 Dual
Lifecycle Status
Active
Datasheet
PDF SQJQ900E-T1_GE3 Datasheet
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Technical Specifications

Vishay SQJQ900E-T1_GE3 MOSFETs technical specifications.

General

Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
4
Package / Case
PowerPAK® 8 x 8 Dual
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
100A (Tc)
Drain to Source Voltage Vdss
40 V
Fet Feature
Standard

Alternate Parts Comparison (SQJQ900E-T1_GE3 vs SQJQ960EL-T1_GE3 vs SQJQ100E-T1_GE3 vs SQJQ466E-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesAutomotive, AEC-Q101, TrenchFET®SQSQJQTrenchFET®
Mounting TypeSurface MountSMD/SMTSMD/SMTSurface Mount
RoHSYesYesRoHS CompliantROHS3 Compliant
Package / CasePowerPAK® 8 x 8 Dual--PowerPAK-8x8-4PowerPAK® 8 x 8
Operating Temperature-55°C ~ 175°C (TJ)---55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C100A (Tc)--200A (Tc)200A (Tc)
Drain to Source Voltage Vdss40 V--40 V60 V
Fet Type2 N-Channel (Dual)--N-ChannelN-Channel
Gate Charge Qg Max Vgs120nC @ 10V--165 nC @ 10 V180 nC @ 10 V
Input Capacitance Ciss Max Vds5900pF @ 20V--14780 pF @ 25 V10210 pF @ 25 V
Rds on Max ID Vgs3.9mOhm @ 20A, 10V--1.5mOhm @ 20A, 10V1.9mOhm @ 10A, 10V
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