Vishay SQJ940EP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 15A I(D), 40V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ940EP-T1_GE3
Detailed Description
Power Field-Effect Transistor, 15A I(D), 40V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Package
PowerPAK® SO-8 Dual Asymmetric
Lifecycle Status
Active
Datasheet
SQJ940EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ940EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
8
Number of Channels
2
Package / Case
PowerPAK® SO-8 Dual Asymmetric
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
18 A
Current Continuous Drain ID 25 C
15A (Ta), 18A (Tc)
Alternate Parts Comparison (SQJ940EP-T1_GE3 vs SQJ262EP-T1_GE3 vs SQJ872EP-T1_GE3 vs SQJ504EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | SQ | SQJ |
| Package / Case | PowerPAK® SO-8 Dual Asymmetric | Tape and Reel | Tape and Reel | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 15A (Ta), 18A (Tc) | 15A (Tc), 40A (Tc) | 24.5A (Tc) | 30A (Tc) |
| Drain to Source Voltage Vdss | 40 V | 60 V | 150 V | 40 V |
| Fet Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) | N-Channel | N and P-Channel |
| Gate Charge Qg Max Vgs | 20nC @ 20V | 10nC @ 10V, 23nC @ 10V | 22 nC @ 10 V | 30nC @ 10V, 85nC @ 10V |
| Input Capacitance Ciss Max Vds | 896pF @ 20V | 550pF @ 25V, 1260pF @ 25V | 1045 pF @ 25 V | 1900pF @ 25V, 4600pF @ 25V |
| Rds on Max ID Vgs | 16mOhm @ 15A, 10V | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 35.5mOhm @ 10A, 10V | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V |
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