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Vishay SQJ202EP-T1_GE3 MOSFETs

Power Field-Effect Transistor,

1,299 ActiveVishayPowerPAK® SO-8 Dual Asymmetric$12.26
SQJ202EP-T1_GE3 PowerPAK® SO-8 Dual Asymmetric package illustration

Same model may have multiple batches, images only for reference.

SQJ202EP-T1_GE3
Manufacturer
Part Number (MPN)
SQJ202EP-T1_GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® SO-8 Dual Asymmetric
Lifecycle Status
Active
Datasheet
PDF SQJ202EP-T1_GE3 Datasheet
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Technical Specifications

Vishay SQJ202EP-T1_GE3 MOSFETs technical specifications.

General

Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Package / Case
PowerPAK® SO-8 Dual Asymmetric
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
60 A
Current Continuous Drain ID 25 C
20A, 60A
Drain to Source Resistance
2.5mO
Drain to Source Voltage Vdss
12 V

Alternate Parts Comparison (SQJ202EP-T1_GE3 vs SQJ872EP-T1_GE3 vs SQJ504EP-T1_GE3 vs SQJ411EP-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesAutomotive, AEC-Q101, TrenchFET®SQSQJSQJ
Package / CasePowerPAK® SO-8 Dual AsymmetricTape and ReelTape and ReelPowerPAK-SO-8-4
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSYesCompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C20A, 60A24.5A (Tc)30A (Tc)60A (Tc)
Drain to Source Voltage Vdss12 V150 V40 V12 V
Fet Type2 N-Channel (Dual)N-ChannelN and P-ChannelP-Channel
Gate Charge Qg Max Vgs22nC @ 10V22 nC @ 10 V30nC @ 10V, 85nC @ 10V150 nC @ 4.5 V
Input Capacitance Ciss Max Vds975pF @ 6V1045 pF @ 25 V1900pF @ 25V, 4600pF @ 25V9100 pF @ 6 V
Rds on Max ID Vgs6.5mOhm @ 15A, 10V35.5mOhm @ 10A, 10V7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V5.8mOhm @ 15A, 4.5V
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