Vishay SQJ200EP-T1_GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ200EP-T1_GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® SO-8 Dual Asymmetric
Lifecycle Status
Active
Datasheet
SQJ200EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ200EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Package / Case
PowerPAK® SO-8 Dual Asymmetric
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
60 A
Current Continuous Drain ID 25 C
20A, 60A
Drain to Source Resistance
3.1mO
Drain to Source Voltage Vdss
20 V
Alternate Parts Comparison (SQJ200EP-T1_GE3 vs SQJ872EP-T1_GE3 vs SQJ411EP-T1_GE3 vs SQJ415EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | SQ | SQJ | SQ |
| Package / Case | PowerPAK® SO-8 Dual Asymmetric | Tape and Reel | PowerPAK-SO-8-4 | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 20A, 60A | 24.5A (Tc) | 60A (Tc) | 30A (Tc) |
| Drain to Source Voltage Vdss | 20 V | 150 V | 12 V | 40 V |
| Fet Type | 2 N-Channel (Dual) | N-Channel | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 18nC @ 10V | 22 nC @ 10 V | 150 nC @ 4.5 V | 95 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 975pF @ 10V | 1045 pF @ 25 V | 9100 pF @ 6 V | 6000 pF @ 25 V |
| Rds on Max ID Vgs | 8.8mOhm @ 16A, 10V | 35.5mOhm @ 10A, 10V | 5.8mOhm @ 15A, 4.5V | 14mOhm @ 10A, 10V |
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