Vishay SQJ488EP-T1_GE3 MOSFETs
Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ488EP-T1_GE3
Base Model
Detailed Description
Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Package
PowerPAK-SO-8-4
Lifecycle Status
Active
Datasheet
SQJ488EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ488EP-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
42 A
Rds on Drain Source Resistance
17.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQJ488EP-T1_GE3 vs SQJ488EP-T1_BE3 vs SQJ481EP-T1_GE3 vs SQJ409EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | Automotive, AEC-Q101, TrenchFET® | SQ | SQ |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| RoHS | Yes | Compliant | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Triple Source | Single | Single |
| Maximum Operating Temperature C | + 175 | 175 | + 175 | + 175 |
| Minimum Operating Temperature C | - 55 | -55 | - 55 | - 55 |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 4.6 ns | -- | 6 ns | 12 ns |
| ID Continuous Drain Current | 42 A | -- | 16 A | 60 A |
| Package | PowerPAK-SO-8-4 | -- | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 |
| Action |
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