Vishay SIJA52DP-T1-GE3 MOSFETs
SIJA52DP-T1-GE3 Vishay MOSFETs Transistor N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIJA52DP-T1-GE3
Detailed Description
SIJA52DP-T1-GE3 Vishay MOSFETs Transistor N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R
Package
PowerPAK-SO-8-4
Lifecycle Status
Active
Datasheet
SIJA52DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIJA52DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIJ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
1.7 mOhms
Alternate Parts Comparison (SIJA52DP-T1-GE3 vs SIJA58ADP-T1-GE3 vs SIJ494DP-T1-GE3 vs SIJ186DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 |
| Series | SIJ | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 9 ns | -- | -- | -- |
| ID Continuous Drain Current | 60 A | -- | -- | -- |
| Pd Power Dissipation | 48 W | -- | -- | -- |
| Qg Gate Charge | 150 nC | -- | -- | -- |
| Action |
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