Vishay SQJ416EP-T1_GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ416EP-T1_GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK-SO-8-4
Lifecycle Status
Active
Datasheet
SQJ416EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ416EP-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
27 A
Rds on Drain Source Resistance
22 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQJ416EP-T1_GE3 vs SQJ481EP-T1_GE3 vs SQJ409EP-T1_GE3 vs SQJ488EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | SQ | SQ | SQ |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 20 ns | 6 ns | 12 ns | 4.6 ns |
| ID Continuous Drain Current | 27 A | 16 A | 60 A | 42 A |
| Maximum Operating Temperature C | + 175 | + 175 | + 175 | + 175 |
| Minimum Operating Temperature C | - 55 | - 55 | - 55 | - 55 |
| Package | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 |
| Pd Power Dissipation | 45 W | 45 W | 68 W | 27 W |
| Action |
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