Vishay SIJA58ADP-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIJA58ADP-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK-SO-8-4
Lifecycle Status
Active
Datasheet
SIJA58ADP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIJA58ADP-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
PowerPAK-SO-8-4
Alternate Parts Comparison (SIJA58ADP-T1-GE3 vs SIJA52DP-T1-GE3 vs SQJ416EP-T1_GE3 vs SQJ420EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 |
| Series | -- | SIJ | SQ | TrenchFET |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 9 ns | 20 ns | 5 ns |
| ID Continuous Drain Current | -- | 60 A | 27 A | 30 A |
| Pd Power Dissipation | -- | 48 W | 45 W | 45 W |
| Qg Gate Charge | -- | 150 nC | 20 nC | 41 nC |
| Rds on Drain Source Resistance | -- | 1.7 mOhms | 22 mOhms | 8.2 mOhms |
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