Vishay SQJ414EP-T1_GE3 MOSFETs
MOSFETs Dual N-Ch 30V AEC-Q101 Qualified
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ414EP-T1_GE3
Detailed Description
MOSFETs Dual N-Ch 30V AEC-Q101 Qualified
Package
PowerPAK-SO-8-4
Lifecycle Status
Active
Datasheet
SQJ414EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ414EP-T1_GE3 MOSFETs technical specifications.
General
Series
SQJ
RoHS
RoHS Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK-SO-8-4
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Alternate Parts Comparison (SQJ414EP-T1_GE3 vs SQJ409EP-T1_GE3 vs SQJ488EP-T1_GE3 vs SQJ416EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQJ | SQ | SQ | SQ |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 5 ns | 12 ns | 4.6 ns | 20 ns |
| Pd Power Dissipation | 45 W | 68 W | 27 W | 45 W |
| Qg Gate Charge | 25 nC | 170 nC | 27 nC | 20 nC |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 9.8 mOhms | 7 mOhms | 17.6 mOhms | 22 mOhms |
| Rise Time | 5 ns | 18 ns | 11 ns | 20 ns |
| Action |
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