Vishay SISS30LDN-T1-GE3 MOSFETs
MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS30LDN-T1-GE3
Detailed Description
MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S
Package
PowerPAK1212-8
Lifecycle Status
Active
Datasheet
SISS30LDN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISS30LDN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
55.5 A
Rds on Drain Source Resistance
8.5 mOhms
Alternate Parts Comparison (SISS30LDN-T1-GE3 vs SISS71DN-T1-GE3 vs SISS27ADN-T1-GE3 vs SISS27DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIS | ThunderFET® | SISS | SIS |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Compliant with Exemption | Yes |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single Quad Drain Triple Source | Single |
| Fall Time | 6 ns | -- | 22 ns | 10 ns |
| Forward Transconductance Min | 37 S | -- | 57 S | 52 S |
| Pd Power Dissipation | 57 W | -- | 57 W | 57 W |
| Qg Gate Charge | 50 nC | -- | 117 nC | 92 nC |
| Action |
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