Vishay SIS434DN-T1-GE3 MOSFETs
N-CH MOSFET 40V 35A 7.6mR TO-252 1.17mm
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS434DN-T1-GE3
Detailed Description
N-CH MOSFET 40V 35A 7.6mR TO-252 1.17mm
Package
PowerPAK1212-8
Lifecycle Status
Active
Datasheet
SIS434DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIS434DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
6.3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SIS434DN-T1-GE3 vs SIS472DN-T1-GE3 vs SIS176LDN-T1-GE3 vs SIS443DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIS | SIS | TrenchFET® Gen IV | TrenchFET® |
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Compliant with Exemption | Yes |
| Technology | Si | Si | MOSFET (Metal Oxide) | Si |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single Quad Drain Triple Source | Single |
| Trade Name | TrenchFET, PowerPAK | TrenchFET, PowerPAK | -- | TrenchFET, PowerPAK |
| Unit Weight | 0.032487 oz | 0.032487 oz | -- | 0.032487 oz |
| Action |
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