Vishay SISH617DN-T1-GE3 MOSFETs
Trans MOSFET P-CH 30V 13.9A 8-Pin PowerPAK 1212-SWLH EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISH617DN-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 13.9A 8-Pin PowerPAK 1212-SWLH EP T/R
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISH617DN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISH617DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
12.3 mOhms
Related Parts Comparison (SISH617DN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3 vs SIS782DN-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 9 ns | -- | -- | -- |
| Forward Transconductance Min | 35 S | -- | -- | -- |
| ID Continuous Drain Current | 35 A | -- | -- | -- |
| Pd Power Dissipation | 52 W | -- | -- | -- |
| Action |
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