Vishay SIHB22N60ET1-GE3 MOSFETs
MOSFET N-CH 600V 21A TO263
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB22N60ET1-GE3
Base Model
Detailed Description
MOSFET N-CH 600V 21A TO263
Package
TO-263 (D²Pak)
Lifecycle Status
Active
Datasheet
SIHB22N60ET1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHB22N60ET1-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Unconfirmed
Package / Case
TO-263
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
21A (Tc)
Drain to Source Voltage Vdss
600 V
Drive Voltage Max Rds on Min Rds on
10 V
Fet Type
N-Channel
Alternate Parts Comparison (SIHB22N60ET1-GE3 vs SIHB22N60E-E3 vs SIHB12N60E-GE3 vs SQM50P03-07-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | Surface Mount | SMD (SMT) |
| Operating Temperature | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TA) |
| RoHS | Unconfirmed | Yes | Compliant | Compliant |
| Technology | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) | MOSFET |
| Series | E | E | -- | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | TO-263 | -- | Bulk | Tube/Rail |
| Lifecycle Status | Active | -- | Active | Active |
| Current Continuous Drain ID 25 C | 21A (Tc) | -- | 12A (Tc) | 50A (Tc) |
| Drain to Source Voltage Vdss | 600 V | -- | 600 V | 30 V |
| Drive Voltage Max Rds on Min Rds on | 10 V | -- | 10 V | 4.5V, 10V |
| Fet Type | N-Channel | -- | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 86 nC @ 10 V | -- | 58 nC @ 10 V | 155 nC @ 10 V |
| Action |
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