Vishay SIHB12N60E-GE3 MOSFETs
MOSFET N CH 600V 12A TO263
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB12N60E-GE3
Base Model
Detailed Description
MOSFET N CH 600V 12A TO263
Package
D2PAK
Lifecycle Status
Active
Datasheet
SIHB12N60E-GE3 Datasheet
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Technical Specifications
Vishay SIHB12N60E-GE3 MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
4
Number of Channels
1
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
12 A
Current Continuous Drain ID 25 C
12A (Tc)
Drain to Source Resistance
380mO
Related Parts Comparison (SIHB12N60E-GE3 vs SIHB12N65E-GE3 vs SIHB120N60E-GE3 vs SUM60061EL-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Compliant with Exemption |
| Mounting Type | Surface Mount | -- | SMD/SMT | Surface Mount |
| Package / Case | Bulk | -- | -- | D2PAK |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | - 55°C ~ + 150°C | -- |
| Number of Pins | 4 | -- | -- | 3 |
| Number of Channels | 1 | -- | 1 Channel | -- |
| Lifecycle Status | Active | -- | -- | Active |
| Fall Time | 38 ns | -- | 33 ns | -- |
| Rise Time | 38 ns | -- | 65 ns | -- |
| Technology | MOSFET (Metal Oxide) | -- | Si | -- |
| Resistance | 380MO | -- | -- | -- |
| Continuous Drain Current ID | 12 A | -- | -- | -- |
| Action |
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