Vishay SQM40P10-40L_GE3 MOSFETs
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQM40P10-40L_GE3
Detailed Description
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3
Package
TO-263 (D²Pak)
Lifecycle Status
Active
Datasheet
SQM40P10-40L_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQM40P10-40L_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Package / Case
TO-263
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
40 A
Current Continuous Drain ID 25 C
40A (Tc)
Drain to Source Voltage Vdss
100 V
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Alternate Parts Comparison (SQM40P10-40L_GE3 vs SQM120N10-3M8_GE3 vs SQM50020EL_GE3 vs SQM100P10-19L_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | TO-263 | TO-263 | TO-263 | TO-263 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 40A (Tc) | 120A (Tc) | 120A (Tc) | 93A (Tc) |
| Drain to Source Voltage Vdss | 100 V | 100 V | 60 V | 100 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 10 V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | P-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 134 nC @ 10 V | 190 nC @ 10 V | 200 nC @ 10 V | 350 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 5295 pF @ 25 V | 7230 pF @ 25 V | 15100 pF @ 25 V | 14100 pF @ 25 V |
| Action |
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