Vishay SQM50P06-15L_GE3 MOSFETs
Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQM50P06-15L_GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Package
TO-263 (D²Pak)
Lifecycle Status
Active
Datasheet
SQM50P06-15L_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQM50P06-15L_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
3
Package / Case
TO-263
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
50 A
Current Continuous Drain ID 25 C
50A (Tc)
Drain to Source Voltage Vdss
60 V
Alternate Parts Comparison (SQM50P06-15L_GE3 vs SQM50P08-25L_GE3 vs SQM50P03-07-GE3 vs SQM120N10-3M8_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | TO-263 | TO-263-3, D2PAK | Tube/Rail | TO-263 |
| Mounting Type | Surface Mount | Surface Mount | SMD (SMT) | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TA) | -55°C ~ 175°C (TJ) |
| Number of Pins | 3 | 3 | 3 | 2 |
| RoHS | Yes | ROHS3 Compliant | Compliant | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 120A (Tc) |
| Drain to Source Voltage Vdss | 60 V | 80 V | 30 V | 100 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10 V |
| Fet Type | P-Channel | P-Channel | P-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 155 nC @ 10 V | 137 nC @ 10 V | 155 nC @ 10 V | 190 nC @ 10 V |
| Action |
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SQM120N10-3M8_GE3VishayPower Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor F…
