Vishay SIHA21N60EF-E3 MOSFETs
Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHA21N60EF-E3
Detailed Description
Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Package
TO-220FP-3
Lifecycle Status
Active
Datasheet
SIHA21N60EF-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHA21N60EF-E3 MOSFETs technical specifications.
General
Series
EF
RoHS
Yes
Mounting Type
Through Hole
Technology
Si
Unit Weight
0.068784 oz
Package
TO-220FP-3
Alternate Parts Comparison (SIHA21N60EF-E3 vs SIHA11N80AE-GE3 vs SIHA12N60E-E3 vs IRFL9110TRPBF-BE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220FP-3 | TO-220-3 | TO220-3 | SOT-223-4 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.068784 oz | 0.068784 oz | 0.068784 oz | 0.008818 oz |
| Series | EF | E | E | -- |
| Operating Temperature | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 27 ns | 19 ns | 17 ns |
| ID Continuous Drain Current | -- | 8 A | 12 A | 1.1 A |
| Action |
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