Vishay SIHA12N60E-E3 MOSFETs
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHA12N60E-E3
Detailed Description
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Package
TO-220AB
Lifecycle Status
Active
Datasheet
SIHA12N60E-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHA12N60E-E3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
380 mOhms
Alternate Parts Comparison (SIHA12N60E-E3 vs IRFBF20PBF vs SUP70040E-GE3 vs SUP90140E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Series | E | -- | TrenchFET® | ThunderFET® |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 150°C | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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