Vishay SIHA11N80AE-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHA11N80AE-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-220-3
Lifecycle Status
Active
Datasheet
SIHA11N80AE-GE3 Datasheet
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Technical Specifications
Vishay SIHA11N80AE-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
391 mOhms
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Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Lifecycle Status | -- | Active | Active | Active |
| Completely Lead Free | -- | No | No | No |
| Dry Pack | -- | NON DRY | NON DRY | NON DRY |
| Halogen Free | -- | Yes | Yes | Yes |
| Lead Free | -- | Yes | Yes | Yes |
| Action |
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