Vishay SIA444DJT-T1-GE3 MOSFETs
MOSFET N-CH 30V 12A PPAK SC70-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA444DJT-T1-GE3
Detailed Description
MOSFET N-CH 30V 12A PPAK SC70-6
Package
PowerPAK® SC-70-6
Lifecycle Status
Obsolete
Datasheet
SIA444DJT-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIA444DJT-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
ROHS3 Compliant
Package / Case
PowerPAK® SC-70-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Continuous Drain ID 25 C
12A (Tc)
Drain to Source Voltage Vdss
30 V
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Fet Type
N-Channel
Alternate Parts Comparison (SIA444DJT-T1-GE3 vs SIA921EDJ-T1-GE3 vs SIA931DJ-T1-GE3 vs SIA906EDJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package / Case | PowerPAK® SC-70-6 | TSOP | PowerPAK® SC-70-6 Dual | TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | ROHS3 Compliant | Yes | Yes | Yes |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 12A (Tc) | 4.5 A | 4.5 A | 4.5 A |
| Drain to Source Voltage Vdss | 30 V | 20 V | 30 V | 20 V |
| Fet Type | N-Channel | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| Gate Charge Qg Max Vgs | 15 nC @ 10 V | 23nC @ 10V | 13nC @ 10V | 12nC @ 10V |
| Rds on Max ID Vgs | 17mOhm @ 7.4A, 10V | 59mOhm @ 3.6A, 4.5V | 65mOhm @ 3A, 10V | 46mOhm @ 3.9A, 4.5V |
| Vgs Th Max ID | 2.2V @ 250µA | 1.4V @ 250µA | 2.2V @ 250µA | 1.4V @ 250µA |
| Action |
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