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Vishay SIA921EDJ-T1-GE3 MOSFETs

Dual P-Ch MOSFET 20V 4.5A 59mR SC70-6

40 ActiveVishaySIA921EDJTSOP$0.94
SIA921EDJ-T1-GE3 TSOP package illustration

Same model may have multiple batches, images only for reference.

SIA921EDJ-T1-GE3
Manufacturer
Part Number (MPN)
SIA921EDJ-T1-GE3
Base Model
Detailed Description
Dual P-Ch MOSFET 20V 4.5A 59mR SC70-6
Package
TSOP
Lifecycle Status
Active
Datasheet
PDF SIA921EDJ-T1-GE3 Datasheet
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Ordering Code Family

SIA921EDJ groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay SIA921EDJ-T1-GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
Yes
Number of Pins
6
Number of Channels
2
Package / Case
TSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
4.5 A
Current Continuous Drain ID 25 C
4.5 A

Alternate Parts Comparison (SIA921EDJ-T1-GE3 vs SIA921EDJ-T4-GE3 vs SIA471DJ-T1-GE3 vs SIA519EDJ-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesCompliantCompliant
SeriesTrenchFET®--SIASIA
Package / CaseTSOP--Tape and ReelTape and Reel
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins6--66
Number of Channels2--1 Channel2 Channel
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C4.5 A--12.9A (Ta), 30.3A (Tc)4.5 A
Drain to Source Voltage Vdss20 V--30 V20 V
Fall Time10 ns--18 ns16 ns, 10 ns
Fet Type2 P-Channel (Dual)--P-ChannelN and P-Channel
Action

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