Vishay SIA931DJ-T1-GE3 MOSFETs
P-CH MOSFET -30V 65mR 4.5A Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA931DJ-T1-GE3
Detailed Description
P-CH MOSFET -30V 65mR 4.5A Surface Mount
Package
PowerPAK® SC-70-6 Dual
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIA931DJ-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
6
Number of Channels
2
Package / Case
PowerPAK® SC-70-6 Dual
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Case Connection
DRAIN
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Alternate Parts Comparison (SIA931DJ-T1-GE3 vs SIA923EDJ-T1-GE3 vs SIA907EDJT-T1-GE3 vs SIA461DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | SIA | SIA | SIA |
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 | 2 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | True | True | True |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Dual | Dual | Single |
| Fall Time | 5 ns | 10 ns, 10 ns | 10 ns, 10 ns | 20 ns |
| Forward Transconductance Min | -- | 11 S, 11 S | 11 S, 11 S | 20 S |
| ID Continuous Drain Current | -- | 4.5 A | 4.5 A | 12 A |
| Package | -- | SOT-323 | SC-70-6 | SC-70-6 |
| Pd Power Dissipation | -- | 7.8 W | 7.8 W | 17.9 W |
| Qg Gate Charge | -- | 25 nC | 23 nC | 18 nC |
| Action |
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