Vishay 2N7002E-T1-E3 MOSFETs
N-CH MOSFET, 60V, 240mA, 3R Rds(on), TO-236
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N7002E-T1-E3
Base Model
Detailed Description
N-CH MOSFET, 60V, 240mA, 3R Rds(on), TO-236
Package
SOT23-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay 2N7002E-T1-E3 MOSFETs technical specifications.
General
Series
2N7002E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
240 mA
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (2N7002E-T1-E3 vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Series | 2N7002E | RUM002N02 |
| Mounting Type | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement |
| Configuration | Single | Single |
| Forward Transconductance Min | 600 mS | 200 mS |
| Maximum Operating Temperature C | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | - 55 |
| Package | SOT23-3 | SOT-23 |
| Pd Power Dissipation | 350 mW | 150 mW |
| Rds on Drain Source Resistance | 3 Ohms | 1.2 Ohms |
| Action |
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2N7002E-T1-GE3VishayTRANSISTOR 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PI…
