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STMicroelectronics STGD4M65DF2 BJTs

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

732 ActiveSTMicroelectronicsTO-252-3, DPAK (2 Leads + Tab), SC-63$1.56
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STGD4M65DF2
Manufacturer
Part Number (MPN)
STGD4M65DF2
Detailed Description
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF STGD4M65DF2 Datasheet
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Technical Specifications

STMicroelectronics STGD4M65DF2 BJTs technical specifications.

General

Series
M
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
40µJ (on), 136µJ (off)
Input Type
Standard
Gate Charge
15.2 nC
Td on Off 25 C
12ns/86ns
Test Condition
400V, 4A, 47Ohm, 15V

Alternate Parts Comparison (STGD4M65DF2 vs STGD20N45LZAG vs STGD18N40LZT4 vs STGD3HF60HDT4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max8 A25 A25 A7.5 A
Current Collector Pulsed Icm16 A50 A40 A18 A
Gate Charge15.2 nC26 nC29 nC12 nC
Input TypeStandardLogicLogicStandard
Power Max68 W125 W125 W38 W
Td on Off 25 C12ns/86ns1.1µs/4.6µs650ns/13.5µs11ns/60ns
Test Condition400V, 4A, 47Ohm, 15V300V, 10A, 1kOhm, 5V300V, 10A, 5V400V, 1.5A, 100Ohm, 15V
Vce on Max Vge IC2.1V @ 15V, 4A1.25V @ 4V, 6A1.7V @ 4.5V, 10A2.95V @ 15V, 1.5A
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