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STMicroelectronics STGD3NB60SDT4 BJTs

600V 3A N-Ch IGBT, TO-252, Surface Mount

9,620 ActiveSTMicroelectronicsTO-252-3, DPAK (2 Leads + Tab), SC-63$3.30
STGD3NB60SDT4 TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

STGD3NB60SDT4
Manufacturer
Part Number (MPN)
STGD3NB60SDT4
Detailed Description
600V 3A N-Ch IGBT, TO-252, Surface Mount
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF STGD3NB60SDT4 Datasheet
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Technical Specifications

STMicroelectronics STGD3NB60SDT4 BJTs technical specifications.

General

Series
PowerMESH™
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
18 nC
Td on Off 25 C
125µs/-
Test Condition
480V, 3A, 1kOhm, 15V
Reverse Recovery Time Trr
1.7 µs

Alternate Parts Comparison (STGD3NB60SDT4 vs STGD20N45LZAG vs STGD18N40LZT4 vs STGD3HF60HDT4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max6 A25 A25 A7.5 A
Current Collector Pulsed Icm25 A50 A40 A18 A
Gate Charge18 nC26 nC29 nC12 nC
Input TypeStandardLogicLogicStandard
Power Max48 W125 W125 W38 W
Td on Off 25 C125µs/-1.1µs/4.6µs650ns/13.5µs11ns/60ns
Test Condition480V, 3A, 1kOhm, 15V300V, 10A, 1kOhm, 5V300V, 10A, 5V400V, 1.5A, 100Ohm, 15V
Vce on Max Vge IC1.5V @ 15V, 3A1.25V @ 4V, 6A1.7V @ 4.5V, 10A2.95V @ 15V, 1.5A
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