STMicroelectronics MJD32C BJTs
3A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD32C
Detailed Description
3A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Obsolete
Datasheet
MJD32C Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics MJD32C BJTs technical specifications.
General
Series
500V Transistors
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
50µA
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
15 W
Transistor Type
PNP
Alternate Parts Comparison (MJD32C vs MJD3055T4 vs MJD45H11T4 vs MJD44H11T4-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 10µA | 10µA |
| Current Collector IC Max | 3 A | 10 A | 8 A | 8 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 3A, 4V | 20 @ 4A, 4V | 40 @ 4A, 1V | 40 @ 4A, 1V |
| Package | TO252 (DPAK) | DPAK-3 | TO-252-3 | TO-252-3,DPAK(2Leads+Tab),SC-63 |
| Power Max | 15 W | 20 W | 20 W | 20 W |
| Transistor Type | PNP | NPN | PNP | NPN |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 8V @ 3.3A, 10A | 1V @ 400mA, 8A | 1V @ 400mA, 8A |
| Action |
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