STMicroelectronics STGD10NC60KDT4 BJTs
600V 20A N-CH IGBT DPAK Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGD10NC60KDT4
Detailed Description
600V 20A N-CH IGBT DPAK Transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
STGD10NC60KDT4 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGD10NC60KDT4 BJTs technical specifications.
General
Series
PowerMESH™
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
19 nC
Td on Off 25 C
17ns/72ns
Test Condition
390V, 5A, 10Ohm, 15V
Alternate Parts Comparison (STGD10NC60KDT4 vs STGD20N45LZAG vs STGD18N40LZT4 vs STGD3HF60HDT4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 20 A | 25 A | 25 A | 7.5 A |
| Current Collector Pulsed Icm | 30 A | 50 A | 40 A | 18 A |
| Gate Charge | 19 nC | 26 nC | 29 nC | 12 nC |
| Input Type | Standard | Logic | Logic | Standard |
| Power Max | 62 W | 125 W | 125 W | 38 W |
| Td on Off 25 C | 17ns/72ns | 1.1µs/4.6µs | 650ns/13.5µs | 11ns/60ns |
| Test Condition | 390V, 5A, 10Ohm, 15V | 300V, 10A, 1kOhm, 5V | 300V, 10A, 5V | 400V, 1.5A, 100Ohm, 15V |
| Vce on Max Vge IC | 2.5V @ 15V, 5A | 1.25V @ 4V, 6A | 1.7V @ 4.5V, 10A | 2.95V @ 15V, 1.5A |
| Action |
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