STMicroelectronics MJD31C BJTs
Low voltage NPN power transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD31C
Detailed Description
Low voltage NPN power transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Obsolete
Datasheet
MJD31C Datasheet
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Technical Specifications
STMicroelectronics MJD31C BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
50µA
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
15 W
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD31C vs MJD45H11T4 vs MJD32C vs MJD44H11T4-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Obsolete | Active |
| Current Collector Cutoff Max | 50µA | 10µA | 50µA | 10µA |
| Current Collector IC Max | 3 A | 8 A | 3 A | 8 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 3A, 4V | 40 @ 4A, 1V | 10 @ 3A, 4V | 40 @ 4A, 1V |
| Power Max | 15 W | 20 W | 15 W | 20 W |
| Transistor Type | NPN | PNP | PNP | NPN |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 1V @ 400mA, 8A | 1.2V @ 375mA, 3A | 1V @ 400mA, 8A |
| Voltage Collector Emitter Breakdown Max | 100 V | 80 V | 100 V | 80 V |
| Package | -- | TO-252-3 | TO252 (DPAK) | TO-252-3,DPAK(2Leads+Tab),SC-63 |
| Action |
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