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STMicroelectronics MJD340T4 BJTs

COMPLEMENTARY SILICON POWER TRANSISTORS

55 ActiveSTMicroelectronicsTO-252-3, DPAK (2 Leads + Tab), SC-63$0.66
MJD340T4 - No Image Available

Same model may have multiple batches, images only for reference.

MJD340T4
Manufacturer
Part Number (MPN)
MJD340T4
Detailed Description
COMPLEMENTARY SILICON POWER TRANSISTORS
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF MJD340T4 Datasheet
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Technical Specifications

STMicroelectronics MJD340T4 BJTs technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
15 W
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
300 V
Current Collector Cutoff Max
100µA (ICBO)

Alternate Parts Comparison (MJD340T4 vs MJD45H11T4 vs MJD31C vs MJD32C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveObsoleteObsolete
Current Collector Cutoff Max100µA (ICBO)10µA50µA50µA
Current Collector IC Max500 mA8 A3 A3 A
Dc Current Gain Hfe Min IC Vce30 @ 50mA, 10V40 @ 4A, 1V10 @ 3A, 4V10 @ 3A, 4V
Description--------
Detailed Description--------
Power Max15 W20 W15 W15 W
Transistor TypeNPNPNPNPNPNP
Voltage Collector Emitter Breakdown Max300 V80 V100 V100 V
Action

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