STMicroelectronics MJD32CT4 BJTs
Low voltage PNP power transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD32CT4
Base Model
Detailed Description
Low voltage PNP power transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD32CT4 Datasheet
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Technical Specifications
STMicroelectronics MJD32CT4 BJTs technical specifications.
General
Series
MJD32C
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
50µA
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
15 W
Transistor Type
PNP
Alternate Parts Comparison (MJD32CT4 vs MJD32CT4-A vs MJD45H11T4 vs MJD31C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector Cutoff Max | 50µA | 50µA | 10µA | 50µA |
| Current Collector IC Max | 3 A | 3 A | 8 A | 3 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 3A, 4V | 10 @ 3A, 4V | 40 @ 4A, 1V | 10 @ 3A, 4V |
| Power Max | 15 W | 15 W | 20 W | 15 W |
| Transistor Type | PNP | PNP | PNP | NPN |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 1V @ 400mA, 8A | 1.2V @ 375mA, 3A |
| Voltage Collector Emitter Breakdown Max | 100 V | 100 V | 80 V | 100 V |
| RoHS | Yes | Yes | Yes | -- |
| Action |
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