STMicroelectronics MJD112T4 BJTs
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD112T4
Detailed Description
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD112T4 Datasheet
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Technical Specifications
STMicroelectronics MJD112T4 BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
1000 @ 2A, 3V
Power Max
20 W
Frequency Transition
25MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD112T4 vs MJD45H11T4 vs MJD31C vs MJD32C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Obsolete |
| Current Collector Cutoff Max | 20µA | 10µA | 50µA | 50µA |
| Current Collector IC Max | 2 A | 8 A | 3 A | 3 A |
| Dc Current Gain Hfe Min IC Vce | 1000 @ 2A, 3V | 40 @ 4A, 1V | 10 @ 3A, 4V | 10 @ 3A, 4V |
| Power Max | 20 W | 20 W | 15 W | 15 W |
| Transistor Type | NPN - Darlington | PNP | NPN | PNP |
| Vce Saturation Max Ib IC | 3V @ 40mA, 4A | 1V @ 400mA, 8A | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A |
| Voltage Collector Emitter Breakdown Max | 100 V | 80 V | 100 V | 100 V |
| Action |
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