ROHM SH8MA4TB1 MOSFETs
MOSFET N/P-CH 30V 9A/8.5A 8SOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SH8MA4TB1
Detailed Description
MOSFET N/P-CH 30V 9A/8.5A 8SOP
Package
8-SOP
Lifecycle Status
Active
Datasheet
SH8MA4TB1 Datasheet
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Technical Specifications
ROHM SH8MA4TB1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
9 A, 8.5 A
Rds on Drain Source Resistance
21 mOhms, 29.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (SH8MA4TB1 vs SH8J66TB1 vs SH8J65TB1 vs SH8M12TB1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| RoHS | Yes | Yes | Yes | Yes |
| ID Continuous Drain Current | 9 A, 8.5 A | 9 A | 7 A | 5 A, 4.5 A |
| Package | 8-SOP | 8-SOP | 8-SOP | 8-SOP |
| Pd Power Dissipation | 3 W | 2 W | 2 W | 2 W |
| Rds on Drain Source Resistance | 21 mOhms, 29.6 mOhms | 19 mOhms | 31 mOhms | 30 mOhms, 40 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel, P-Channel | P-Channel | P-Channel | N-Channel, P-Channel |
| Unit Weight | 0.002926 oz | 0.002926 oz | 0.002926 oz | 0.002926 oz |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V | 30 V |
| Number of Channels | 2 Channel | -- | 2 Channel | 2 Channel |
| Action |
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