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ROHM SH8K41GZETB MOSFETs

MOSFET 2N-CH 80V 3.4A 8SOP

22,500 ActiveROHM8-SOP$0.60RoHS
SH8K41GZETB 8-SOP package illustration

Same model may have multiple batches, images only for reference.

SH8K41GZETB
Manufacturer
Part Number (MPN)
SH8K41GZETB
Detailed Description
MOSFET 2N-CH 80V 3.4A 8SOP
Package
8-SOP
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Technical Specifications

ROHM SH8K41GZETB MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
3.4 A
Rds on Drain Source Resistance
90 mOhms, 90 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (SH8K41GZETB vs SH8J66TB1 vs SH8J65TB1 vs SH8M12TB1)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 150°C+ 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C
RoHSYesYesYesYes
ID Continuous Drain Current3.4 A9 A7 A5 A, 4.5 A
Package8-SOP8-SOP8-SOP8-SOP
Pd Power Dissipation2 W2 W2 W2 W
Rds on Drain Source Resistance90 mOhms, 90 mOhms19 mOhms31 mOhms30 mOhms, 40 mOhms
TechnologySiSiSiSi
Transistor PolarityN-ChannelP-ChannelP-ChannelN-Channel, P-Channel
Unit Weight0.002926 oz0.002926 oz0.002926 oz0.002926 oz
Vds Drain Source Breakdown Voltage80 V30 V30 V30 V
Number of Channels2 Channel--2 Channel2 Channel
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