ROHM SH8J66TB1 MOSFETs
MOSFET 2P-CH 30V 9A 8SOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SH8J66TB1
Detailed Description
MOSFET 2P-CH 30V 9A 8SOP
Package
8-SOP
Lifecycle Status
Active
Datasheet
SH8J66TB1 Datasheet
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Technical Specifications
ROHM SH8J66TB1 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
9 A
Rds on Drain Source Resistance
19 mOhms
Pd Power Dissipation
2 W
Forward Transconductance Min
11 S
Alternate Parts Comparison (SH8J66TB1 vs SH8M12TB1 vs SH8K32GZETB vs SH8MA4TB1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| RoHS | Yes | Yes | Yes | Yes |
| ID Continuous Drain Current | 9 A | 5 A, 4.5 A | 4.5 A | 9 A, 8.5 A |
| Package | 8-SOP | 8-SOP | 8-SOP | 8-SOP |
| Pd Power Dissipation | 2 W | 2 W | 2 W | 3 W |
| Rds on Drain Source Resistance | 19 mOhms | 30 mOhms, 40 mOhms | 65 mOhms | 21 mOhms, 29.6 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | N-Channel, P-Channel | N-Channel | N-Channel, P-Channel |
| Unit Weight | 0.002926 oz | 0.002926 oz | 0.002926 oz | 0.002926 oz |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 60 V | 30 V |
| Part Aliases | SH8J66 | -- | SH8K32 | SH8MA4 |
| Action |
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