ROHM SH8M12TB1 MOSFETs

Name: SH8M12TB1
Brand: ROHM
SKU: SH8M12TB1
Price: 4.3699 USD
Availability: InStock

MOSFET N/P-CH 30V 5A/4.5A 8SOP

810 ActiveROHM8-SOP$4.37

Same model may have multiple batches, images only for reference.

SH8M12TB1

Manufacturer

ROHM

Part Number (MPN)

SH8M12TB1

Technical Specifications

ROHM SH8M12TB1 MOSFETs technical specifications.

General

RoHS

Yes

Number of Channels

2 Channel

Mounting Type

SMD/SMT

Operating Temperature

- 55°C ~ + 150°C

Technology

Transistor Polarity

N-Channel, P-Channel

Vds Drain Source Breakdown Voltage

30 V

ID Continuous Drain Current

5 A, 4.5 A

Rds on Drain Source Resistance

30 mOhms, 40 mOhms

Vgs Gate Source Voltage

- 20 V, + 20 V

Related Parts Comparison (SH8M12TB1 vs SH8J66TB1 vs SH8J65TB1 vs SH8K41GZETB)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

	This Part	Related Part	Related Part	Related Part
	ROHMSH8M12TB1	ROHMSH8J66TB1	ROHMSH8J65TB1	ROHMSH8K41GZETB
Mounting Type	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Operating Temperature	- 55°C ~ + 150°C	+ 150°C	- 55°C ~ + 150°C	- 55°C ~ + 150°C
RoHS	Yes	Yes	Yes	Yes
ID Continuous Drain Current	5 A, 4.5 A	9 A	7 A	3.4 A
Package	8-SOP	8-SOP	8-SOP	8-SOP
Pd Power Dissipation	2 W	2 W	2 W	2 W
Rds on Drain Source Resistance	30 mOhms, 40 mOhms	19 mOhms	31 mOhms	90 mOhms, 90 mOhms
Technology	Si	Si	Si	Si
Transistor Polarity	N-Channel, P-Channel	P-Channel	P-Channel	N-Channel
Unit Weight	0.002926 oz	0.002926 oz	0.002926 oz	0.002926 oz
Vds Drain Source Breakdown Voltage	30 V	30 V	30 V	80 V
Number of Channels	2 Channel	--	2 Channel	2 Channel
Action	RFQ	RFQ	RFQ	RFQ

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