ROHM RV1C001ZPT2L MOSFETs
MOSFET P-CH 20V 100MA VML0806
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RV1C001ZPT2L
Detailed Description
MOSFET P-CH 20V 100MA VML0806
Package
3-SMD, No Lead
Lifecycle Status
Active
Datasheet
RV1C001ZPT2L Datasheet
Quick Jump:
Technical Specifications
ROHM RV1C001ZPT2L MOSFETs technical specifications.
General
Series
RV1C001ZP
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
3-SMD, No Lead
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
100 mA
Alternate Parts Comparison (RV1C001ZPT2L vs RV2C002UNT2L vs RV2C014BCT2CL vs RV2C001ZPT2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | RV1C001ZP | RVxC | RVxC | RV2C001ZP |
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | ROHS3 Compliant | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 137 ns | 25 ns | 3.1 ns | 137 ns |
| Pd Power Dissipation | 100 mW | 100 mW | 600 mW | 100 mW |
| Rds on Drain Source Resistance | 3.8 Ohms | 2 Ohms | 700 mOhms | 2.5 Ohms |
| Rise Time | 62 ns | 4 ns | 12 ns | 62 ns |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Transistor Polarity | P-Channel | N-Channel | P-Channel | P-Channel |
| Action |
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