ROHM RV2C001ZPT2L MOSFETs
MOSFET P-CH 20V 100MA DFN1006-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RV2C001ZPT2L
Detailed Description
MOSFET P-CH 20V 100MA DFN1006-3
Package
VML1006
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
ROHM RV2C001ZPT2L MOSFETs technical specifications.
General
Series
RV2C001ZP
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
100 mA
Rds on Drain Source Resistance
2.5 Ohms
Alternate Parts Comparison (RV2C001ZPT2L vs RV2C002UNT2L vs RV1C002UNT2CL vs RV3C002UNT2CL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | RV2C001ZP | RVxC | RV1C002UN | RVxC |
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 137 ns | 25 ns | 25 ns | 25 ns |
| Package | VML1006 | DFN-1006-3 | Tape & Reel (TR) | Tape & Reel (TR) |
| Pd Power Dissipation | 100 mW | 100 mW | 100 mW | 100 mW |
| Rds on Drain Source Resistance | 2.5 Ohms | 2 Ohms | 2 Ohms | 2 Ohms |
| Rise Time | 62 ns | 4 ns | 4 ns | 4 ns |
| Technology | Si | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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