ROHM RV2C002UNT2L MOSFETs
MOSFET N-CH 20V 180MA DFN1006-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RV2C002UNT2L
Detailed Description
MOSFET N-CH 20V 180MA DFN1006-3
Package
DFN-1006-3
Lifecycle Status
Active
Datasheet
RV2C002UNT2L Datasheet
Quick Jump:
Technical Specifications
ROHM RV2C002UNT2L MOSFETs technical specifications.
General
Series
RVxC
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
180 mA
Rds on Drain Source Resistance
2 Ohms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (RV2C002UNT2L vs RV1C001ZPT2L vs RV1C002UNT2CL vs RV2C010UNT2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | RVxC | RV1C001ZP | RV1C002UN | RV2C010UN |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | ROHS3 Compliant | Compliant | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 25 ns | 137 ns | 25 ns | 10 ns |
| Pd Power Dissipation | 100 mW | 100 mW | 100 mW | 400 mW |
| Rds on Drain Source Resistance | 2 Ohms | 3.8 Ohms | 2 Ohms | 470 mOhms |
| Rise Time | 4 ns | 62 ns | 4 ns | 15 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | P-Channel | N-Channel | N-Channel |
| Action |
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