ROHM RUC002N05T116 MOSFETs
MOSFET N-CH 50V 200MA SST3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RUC002N05T116
Base Model
Detailed Description
MOSFET N-CH 50V 200MA SST3
Package
SOT23-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
ROHM RUC002N05T116 MOSFETs technical specifications.
General
Series
RUC002N05
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
2.2 Ohms
Vgs Gate Source Voltage
- 8 V, + 8 V
Related Parts Comparison (RUC002N05T116 vs RUC002N05HZGT116 vs RUM002N02T2L)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | |
|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single |
| Fall Time | 55 ns | 55 ns | 10 ns |
| Maximum Operating Temperature C | + 150 | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | - 55 | - 55 |
| Package | SOT23-3 | SOT23-3 | SOT-23 |
| Pd Power Dissipation | 350 mW | 350 mW | 150 mW |
| Rds on Drain Source Resistance | 2.2 Ohms | 1.6 Ohms | 1.2 Ohms |
| Rise Time | 6 ns | 6 ns | 10 ns |
| Action |
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